Micro- and nanosciences

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Vapor generation system

Description: A chemical system for generating controlled gas and vapor mixtures

Year of Manufacture and Installation: 2009 / 2009

System capabilities:

- Air and nitrogen gas mixtures (0-100 %) as carrier gas.

- Humidified carrier gas (0-90 %RH).

- Chemical vapors in a wide concentration range in dry or humidified carrier gas. Especially generating vapors of organic solvents and volatile organic compounds (e.g. ethanol, acetone, toluene, etc.) is easy.


The system can be used for

- Characterization of any devices, including gas sensors, in various gas atmospheres.

- The generated gas mixtures can be used in various processes, for example annealing in controlled atmosphere.

Contact person:

Aapo Varpula / Electron Physics Group
Department of Micro and Nanosciences
Aalto University
aapo.varpula(at)tkk.fi
Tel. +358 9 470 24985
Fax +358 9 470 25008

WT-85X 400 Lifetime scanner

- Method for the spacial measurement of bulk minority carrier recombination lifetime.

- Kelvin-probe for surfacepotential measurements.

- More information about the device.

Contact person:

Hele Savin / Electron Physics Group

DLS-83D Deep Level Spectrometer (DLTS)

- Deep impurities in semiconductors.

- More information about the device.

Contact person:

Hele Savin / Electron Physics Group

Hall-measurement system + cryostat

- T range 8 K - 300 K

- Semiconductor carrier concentration and mobility as a function of temperature and magnetic field (max. 1.3 T).

- More information about the device.

Contact person:

Sergey Novikov / Electron Physics Group

Probe-station

- I-V and C-V measurements for semiconductor devices.

- HP4155A Semiconductor parameter analyser and HP4192A LF impedance analyser.

Contact person:

Antti Haarahiltunen / Electron Physics Group

NTegra Scanning Probe Microscope (SPM)

Morphology of surfaces by contact / semicontact AFM and STM

- Lateral Force Microscopy (LFM)

- Force Modulation Microscopy (FMM)

- Electrical SPM imaging (SKM, SRI, SCM, EFM)

- Magnefic Force Microscopy (MFM)

- Oxidation & scratching lithography

- Max. sample size ca. 10 mm x 20 mm

- Max. scanning area 14 µm

- Res. 3 Å vertical

- Diameter of probe tip ca. 10-100 nm

- Scanning head configuration for AFM, LFM, FMM and MFM:

• • Max. sample size 4" wafer
  • Max. scanning area 100 µm
  • Res. 1 nm vertical
  
  

Contact:

Optoelectronics group

Nanoscope IIE AFM

Morfology of hard surfaces.

- Max. sample size ca. 5 mm x 5 mm

- Max. scanning area 13 µm

- Res. 3 Å vertical

- Diameter of probe tip ca. 10-100 nm

Contact:

Optoelectronics group

PANalytical X'Pert PRO MRD

High resolution x-ray diffraction system.

- Cu x-ray tube. (1-7 crystals)

- Applications:

• • Texture analysis
  • Stress analysis
  • Thin film analysis, XRR (Thickness and surface roughness)
  • Crystalstructure analysis

- Max 6" wafer

Contact:

Optoelectronics group

Optical spectroscopy

- Photoluminesence, photoreflectance, absorption etc.

- Spectroscopical measurements on wavelengths 260-3200 nm.

- Ttimedependent measurements (res. 30 ps) on 700-1300 nm.

- Excitation lasers: 2x Argon, HeCd, Verdi V10+frequency doubling, Ti-Sf, excimer, MIRA.

- Detectors: Si-, InGaAs-, PbS-, InAs-diodes, PMT, LN-Ge, Microchannel plate.

Contact:

Optoelectronics group

Equipment grouped by departments Department of Applied Physics Department of Chemistry Department of Biotechnology and Chemical Technology Department of Materials Science and Engineering Department of Forest Products Technology Department of Electrical and Communications Engineering Department of Micro- and Nanosciences Equipment grouped by application areas Spectrometry / spectroscopy Microscopy X-ray Growth and sample preparation Electrical measurements Mechanical properties Magnetometer Thermal analysis Vapor generation system